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Gallium arsenide (GaAs) single crystal

Gallium arsenide (GaAs) single crystal

 

Major capability parameter
Single crystal
Doped
Conduction type
Carrier concentration
(/cm3)
EPD
(/cm2)
Growth method
Wafer size
GaAs wafer
Un-doped
 Semi-insulating
/
<5x105
LEC
HB
φ6"x0.625mm
φ4"x0.6mm
φ2"x0.35mm
Si-doped
N-type
>5×1017
Cr-doped
Si-type
/
Fe-doped
N-type
~2×1018
Zn-doped
P-type
>5×1017
Orientation
<100>, <111>, or other off-angle orientation
Standard Size(mm)
φ2"x0.35mm, φ3"x0.6mm, φ4"x0.625mm, φ6"x0.625mm, 
25x25x0.5mm, 10x10x0.5mm, 10x5x0.5mm, 5x5x0.5mm
Special size and orientation are available upon request
Surface roughness
(Ra):<=5A(0.5nm)
Polishing
Single side polished or Double side polished
Packing
100 clean bag，1000 exactly clean bag

 

We supply Gallium arsenide  (GaAs)  crystal  ,  Gallium arsenide semiconductor crystals material. Welcome to order various sizes and specifications of GaAs single crystal.

 

 

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