Gallium arsenide (GaAs) single crystal
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Major capability parameter
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Single crystal
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Doped
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Conduction type
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Carrier concentration
(/cm3) |
EPD
(/cm2)
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Growth method
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Wafer size
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GaAs wafer
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Un-doped
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Semi-insulating |
/
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<5x105
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LEC
HB
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φ6"x0.625mm
φ4"x0.6mm
φ2"x0.35mm
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Si-doped
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N-type
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>5×1017
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Cr-doped
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Si-type
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/
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Fe-doped
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N-type
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~2×1018
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Zn-doped
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P-type
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>5×1017
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Orientation
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<100>, <111>, or other off-angle orientation
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Standard Size(mm)
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φ2"x0.35mm, φ3"x0.6mm, φ4"x0.625mm, φ6"x0.625mm,
25x25x0.5mm, 10x10x0.5mm, 10x5x0.5mm, 5x5x0.5mm
Special size and orientation are available upon request
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Surface roughness
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(Ra):<=5A(0.5nm)
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Polishing
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Single side polished or Double side polished
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Packing
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100 clean bag，1000 exactly clean bag
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We supply Gallium arsenide (GaAs) crystal , Gallium arsenide semiconductor crystals material. Welcome to order various sizes and specifications of GaAs single crystal.
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