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Gallium phosphide (GaP) single crystal
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Major capability parameter
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single crystal
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Doped
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conduction type
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concentration of flows cm-3
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Density
cm-2
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Growth method
Max size
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Substrate
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GaP
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S
Undoped
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N
N
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2~8×1017
2~6×1016
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<105
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LEC
Dia50
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2″×0.5
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Size（mm）
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25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Special size and orientation are available upon request
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Surface rough
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Surface roughness(Ra):<=5A
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Polishing
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Single or double
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Pack
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100 clean bag，1000 exactly clean bag
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We supply Gallium phosphide (GaP) single crystal , Gallium phosphide semiconductor crystals material. Welcome to order various sizes and specifications of GaP single crystal.
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