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AlN ceramic substrate/plate

AlN ceramic substrate/plate

 

Items

SD5111

SD5113

SD5115

SD5116

Density:

>3.2

>3.25

>3.25

>3.26

Thermal conductivity:

80~100

100~130

140~170

>170

The coefficient of thermal expansion:

<4.5

<4.3

<4.3

<4.2

Electric strength:

>15

>15

>15

>15

Dielectric coefficient

9

8.7

8.7

8.7

tgδ

3~10

3~7

3~7

3~7

Volume resistivity

>10 13

>10 14

>10 14

>10 14

Flexural strength

>20

>25

>28

>30

 

Substrate material

Aluminum Nitride ceramic plate/substrate

Standard Size

4.5" x 4.5" x 2.0mm
4" x 4" x 2.0mm
3" x 3" x 1.0mm
2" x 2" x 0.5mm
10 x 10 x 0.5mm
Dia. 50 x 1.0mm

Thickness

0.65mm, 1.0mm, 1.5mm, 2.0mm

Polishing

Fine ground, Single side polished or Both side polished

Surface Roughness: Ra<100A

 

The Aluminum Nitride AlN ceramic substrate is mainly used as High-performance substrate materials and packaging materials in high-density hybrid circuits, microwave power devices, power electronics, optoelectronic components, and semiconductor refrigeration devices. AlN ceramic substrate with high thermal conductivity, good electrical properties, thermal expansion coefficient close to Silicon wafer, non-toxic, is an ideal material to replace BeO ceramics, is an ideal large-scale integrated circuit heat sink substrate and packaging materials.

 

AlN ceramic substrate has excellent thermal conductivity (5-10 times than Alumina ceramic substrate), low dielectric constant and dielectric loss, reliable insulation properties, excellent mechanical properties, non-toxic, high temperature resistance, chemical resistance, And similar to the thermal expansion coefficient of silicon, widely used in communications devices, high-brightness LEDs, power electronics and other industries. 

 
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