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AlN ceramic substrate/plate

AlN ceramic substrate/plate

 

The main performance parameters

Product Name

Aluminum Nitride(AlN) ceramic plate/substrate

Material

Aluminum Nitride(AlN) 

Density (g/cm3)

> 3.33

Water Absorption

 0 %

Color

 Gray

Dielectric Constant

8~10 (1MHz)

Flexural Strength

>450 Mpa

Dielectric Strength

> 17 KV/mm

Volume resistivity (20°C)

> 10E13 ohm-cm

Thermal Conductivity (20°C)

>170 W/(m.K)

Thermal Expansion Coefficient (10-6/°C)

2~3 (20~300°C)
2.5~3.5 (300~800°C)

Other options

Alumina ceramicZirconia(YSZ) ceramic, Silicon Nitride(Si3N4) ceramic

 

Standard specifications
Product Name Color/Purity/Method Size Thickness Polishing  
AlN ceramic substrate Gray 114.3 x 114.3mm
101.6 x 101.6mm
100 x 100mm
76.2 x 76.2mm
50 x 50mm
10 x 10mm
φ50.8mm
φ100mm
Or others
0.1mm
0.25mm
0.385mm
0.5mm
0.635mm
1.0mm
2.0mm
Or others
Un-polished surface
Single side polished
Double side polished
 
Unpolished: Ra 0.2~0.75um
Polished:    Ra 0.02~0.05um
Best Polished: Ra  <10 nm
Inquiry Online

 

The Aluminum Nitride ceramic substrate is mainly used as High-performance substrate materials and packaging materials in high-density hybrid circuits, microwave power devices, power electronics, optoelectronic components, and semiconductor refrigeration devices. AlN ceramic substrate with high thermal conductivity, good electrical properties, thermal expansion coefficient close to Silicon wafer, non-toxic, is an ideal material to replace BeO ceramics, is an ideal large-scale integrated circuit heat sink substrate and packaging materials.

 

AlN ceramic substrate has excellent thermal conductivity (5-10 times than Alumina ceramic substrate), low dielectric constant and dielectric loss, reliable insulation properties, excellent mechanical properties, non-toxic, high temperature resistance, chemical resistance, And similar to the thermal expansion coefficient of silicon, widely used in communications devices, high-brightness LEDs, power electronics and other industries. 


 
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