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BSO substrate

BSO substrate

 

Crystal structure :

Cubic

Lattice constant :

a=10.146Å

Growth method :

Czochralski method

Melting point :

930℃

Density :

9.2g/cm3

Mohs hardness :

4.5 Mohs

Dielectric constant :

εS11/ε0 42.7、εT11/ε0 47.5

Elastic stiffness coefficient
( x1011N/m2) :

CE11 1.33、CE44 0.25

The piezoelectric strain constants
(C/m2 ) :

e14 1.01

Through the range (nm) :

470~7500

Electro-optic coefficient (x10 -12 M/V) 

r41 5

Refractive index :

2.45 @ 632.8nm

Refractive index gradient (x10 -5 /cm) :

< 5 @ 632.8nm

Opticity (mm -1  ) :

  left 20° ~ @632.8nm

 Transmittance (%):

69 @632.8nm

Crystal orientation :

<100>, <110>, <001>  ±0.5°

Standard Size:

45x45x0.5mm, 10x10x0.5mm, 25x25x0.5mm

Polishing:

Single side polished or Both side polished

 

Bismuth silicate (Bi12SiO20) single crystal, abbreviation BSO substrate is an excellent material for surface acoustic wave devices, bulk acoustic wave devices, holographic memories and electro-optical devices.
 
BSO crystal is a good photorefractive crystal with a wide range of applications. It is a light yellow photoelectric/electro-optical crystal and a photorefractive crystal. It can be used in electro-optic readout optical memory (PROM), thin film optical waveguide, photorefractive and phase conjugation.

 

 

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