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CdTe substrate

CdTe substrate


The main performance parameters

Product Name:

CdTe single crystal substrate

Growth method


Crystal Structure :

Cubic, F43m

Lattice constant:

a = 6.483Å

Melting point:

1047 ℃


5.851 g/cm3

Heat capacity

0.210 J /g.k

Thermal expansion coefficient

5.0 x 10-6/K

Thermal Conductivity

6.3 W /m.k at 300K

Transmission wavelength

0.85 ~ 29.9 μm

Refractive index


Conductive Type



 <100>, <001>, <110>, <111>

Standard Size

10x10x1.0mm, 5x5x1.0mm, 10x10x0.5mm, 5x5x0.5mm, 


Single side polished or Double side polished


class-100 clean bag, in class-1000 clean room


Cadmium telluride (CdTe) crystal substrates are widely used in X-ray detection; infrared optics; epitaxial substrates; crystal plates of evaporation sources and other related fields.


Cadmium telluride,CdTe substrate is an important II-VI group compound semiconductor material, and its crystal structure is sphalerite. With a direct transition energy band structure,
II-VI group compound semiconductor materials have hitherto been difficult to growth large-diameter single crystal, and many of them have been made into epitaxial films. CdTe, CdS, ZnSe, ZnS have been used for important applications.
The production cost of CdTe thin film solar cells is much lower than other materials, and it is consistent with the solar spectrum, which can absorb more than 95% of sunlight. On the basis of extensive and in-depth application research, CdTe batteries have begun to scale industrial production from the laboratory research stage  in many countries in the world.
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