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GSGG substrate

GSGG substrate

 

Composition

Gd3Sc2Ga3O12

Crystal Structure

Cubic:  

Lattice constant (Å)

a =12.554 Å ,      

Melt Point

~1730 oC        

 Density

~ 7.09   g/cm3  

Hardness

~ 7.5 ( mohns)

Refractive index

1.95

Dielectric constant

30

Dielectric loss tangent (10 GHz)

ca. 3.0 * 10_4

 Crystal Purity

> 99.99%

Crystal growth method

Czochralski

Orientation

<111> +/-0.5°

Standard Size

10 mm x 10 mm x 0.5 mm

Polishing

One side polished

Surface Roughness(Ra):

 < 10A  (5um x 5um)

 

Sc-doped GGG(GSGG) crystal have a higher lattice constant than GGG crystal. The Sc-doped gadolinium gallium garnet(GSGG) crystal is grown by the CZ method, it is  a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films

 
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