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GSGG substrate

GSGG substrate

 

The main performance parameters

Composition

Gd3Sc2Ga3O12

Crystal Structure

Cubic:  

 Purity

> 99.99%

Growth method

Czochralski method

Lattice constant

a =12.554 Å ,      

Melting Point

~1730℃       

Density

~ 7.09   g/cm3  

Mohs Hardness

~ 7.5

Refractive index

1.95

Dielectric constant

30

Dielectric loss tangent (10 GHz)

3.0 x 10-4

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
GSGG substrate <111> ±0.5°
Or other off-angle
10x10mm
10x5mm
5x5mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
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Sc-doped GGG(GSGG) crystal have a higher lattice constant than GGG crystal. The Sc-doped gadolinium gallium garnet(GSGG) crystal is grown by the CZ method, it is  a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films

 
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