GSGG substrate
The main performance parameters |
|
Composition |
Gd3Sc2Ga3O12 |
Crystal Structure |
Cubic: |
Purity |
> 99.99% |
Growth method |
Czochralski method |
Lattice constant |
a =12.554 Å , |
Melting Point |
~1730℃ |
Density |
~ 7.09 g/cm3 |
Mohs Hardness |
~ 7.5 |
Refractive index |
1.95 |
Dielectric constant |
30 |
Dielectric loss tangent (10 GHz) |
3.0 x 10-4 |
Standard Specification | |||||
Product Name | Orientation | Standard Size | Thickness | Polishing | |
GSGG substrate |
<111> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
Inquiry Online |
Sc-doped GGG(GSGG) crystal have a higher lattice constant than GGG crystal. The Sc-doped gadolinium gallium garnet(GSGG) crystal is grown by the CZ method, it is a good magneto-optical crystal and is excellent substrate for for growing bismuth-substituted iron garnet epitaxial films
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