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GaN on Silicon wafer

GaN on Silicon wafer


Standard Specification

ITEM

Gallium Nitride on Silicon wafer, GaN on Silicon wafer

GaN thin film

0.5μm ± 0.1 μm

GaN orientation

C-plane (0001)

Ga-face

<1nm, As-grown, EPI-ready

N-face

P-type/B-doped

Polarity

Ga-face

Conductivity type

Undoped/N-type

Macro defect density

<5/cm^2

 

 

Silicon wafer substrate

 

Orientation

<100>

Conductivity type

N-type/P-doped or P-type/B-doped

Dimension:

10 x 10 x 0.5mm, Single side polished
Dia. 2” x 0.5mm, Single side polished
Dia. 4" x 0.525mm, Single side polished

Resistivity

1-5 ohm-cm, 0-10 ohm-cm, <0.005 ohm-cm or others


The GaN on Silicon wafer is to deposite a GaN thin film layer on semiconductor silicon wafer, by use this method to reduce costs and to replace Gallium Nitride single crystal substrate.

We can customize the GaN on Silicon wafer upon customer's requirements, 

 
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