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GaP substrate

GaP substrate


Substrate material

Single crystal Gallium Phosphide (GaP)

Crystal structure

Cubic        a =5.4505 Å

Growth method

Czochralski (CZ)


4.13  g/cm3

Melting point:

1480 ℃

Coefficient of thermal expansion:

5.3 x10-6


S-doped/N-type; Undoped/N-type

Thermal conductivity:

2~8 x1017/cm3; 4~ 6 x1016/cm3

Resistivity (

~0.03; ~0.3

EPD (cm-2 ):

 < 3x10E5; < 3x10E5

Standard Orientation

 <111> or <100>

Standard size

 10x10x0.5mm, Dia2"x0.5mm, Dia2"x0.28mm


 Single side polished or Double side polished


The crystal structure of Gallium Phosphide(GaP) is a sphalerite type, which is an indirect transition type semiconductor. It is one of the main substrate materials for LEDs.


The Gallium Phosphide(GaP) epitaxial material is obtained by liquid-phase epitaxy or vapor-phase epitaxy and diffusion growth on a gallium phosphide single crystal substrate. The GaP is mostly used to manufacture light-emitting diodes. The GaP liquid-phase epitaxial material can produce red, green, yellow-green light-emitting diodes. And the GaP Vapor-phase epitaxial  and diffusion-grown material can produce yellow, yellow-green light-emitting diodes. 



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