BIOTAIN CRYSTAL

 
BIOTAIN CRYSTAL > Substrate Materials > Single crystal substrates > Product Information > Next :YAG substrate

GaP substrate

GaP substrate

 

Substrate material

Single crystal Gallium Phosphide (GaP)

Crystal structure

Cubic        a =5.4505 Å

Growth method

Czochralski (CZ)

 Density:

4.13  g/cm3

Melting point:

1480 ℃

Coefficient of thermal expansion:

5.3 x10-6

Doping:

S-doped/N-type; Undoped/N-type

Thermal conductivity:

2~8 x1017/cm3; 4~ 6 x1016/cm3

Resistivity (W.cm)

~0.03; ~0.3

EPD (cm-2 ):

 < 3x10E5; < 3x10E5

Standard Orientation

 <111> or <100>

Standard size

 10x10x0.5mm, Dia2"x0.5mm, Dia2"x0.28mm

Polishing

 Single side polished or Double side polished

 

The crystal structure of Gallium Phosphide(GaP) is a sphalerite type, which is an indirect transition type semiconductor. It is one of the main substrate materials for LEDs.

 

The Gallium Phosphide(GaP) epitaxial material is obtained by liquid-phase epitaxy or vapor-phase epitaxy and diffusion growth on a gallium phosphide single crystal substrate. The GaP is mostly used to manufacture light-emitting diodes. The GaP liquid-phase epitaxial material can produce red, green, yellow-green light-emitting diodes. And the GaP Vapor-phase epitaxial  and diffusion-grown material can produce yellow, yellow-green light-emitting diodes. 

 

 
Send Inquiry Online

For more information, please feel free to send us an Online Inquiry or Email us.



Contact Us

  • BIOTAIN CRYSTAL CO., LIMITED
  • Tel: (+86) 1506 0796 451
  • Fax: (+86) 0597 2212602
  • Email:
  • Work Time ( GMT +8 ):
  •    9 AM ~ 6 PM, Monday to Friday
  • Main office: A7, No. 501, Denggaoxi Road, Xipi street, Xinluo District, Longyan, Fujian, China