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GaN substrate

GaN substrate

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GaN single crystal substrate/wafer
Grade S-level A-level B-level C-level
Standard Size 5X5.5mm, 10x10.5mm, 14x15mm, φ50.8mm, φ100mm
Standard Thickness 350 ± 20 μm;  500 ± 20 μm
Marco Defect Density <0 /cm2 <0.3 /cm2 <1 /cm2 <4 /cm2
Orientation C-plane <0001> ± 0.5º
Primary Orientation flat
Second Orientation flat
<1-100> ± 0.5°, 16mm(2-inch) / 30mm(4-inch)
<11-20> ± 3°, 8mm(2-inch) / 15mm(4-inch)
TTV <= 15 μm
BOW <= 20 μm
Dopant / Conductive Undoped/N-type               (Resistivity: < 0.5 Ω-cm)
Semi-insulating/Fe-doped (Resistivity: > 10E6 Ω-cm)
Si-doped/N-type               (Resistivity: < 0.05 Ω-cm )
Dislocation Density <3x106 cm-2 <3x106 cm-2 <3x106 cm-2
Useable surface area >90% >80% >70%
Max size of macro defects   < 700 μm < 2000 μm < 4000 μm
Polishing Ga-face surface roughness: Ra <0.3nm (Epitaxy-ready)
N-face surface roughness:  Ra 0.5 ~1.5 μm (optional: Ra <0.3 nm (polished))
Packing Each piece individual packed in one bag, with class-100 clean bag


Gallium nitride, GaN substrate. GaN has a wide direct bandgap, strong atomic bonds and high thermal conductivity, etc., and it is a strong ability on anti-radiation, Not only is the short-wavelength optoelectronic materials, Also the replacement materials of high temperature semiconductor device, GaN can be used to make blue and green LED, or violet, ultraviolet light LD, ultraviolet detectors and high-frequency high-power electronic devices.

 
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