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GaN substrate

GaN substrate

 

Items

GaN - 5

GaN - 10

GaN - 15

GaN - 2", 4"

Dimensions

5 x 5.5mm

10 x 10.5mm

14 x 15mm

Φ50.8mm, Φ100mm

Marco Defect Density

A Level

0 cm-2

<= 2 cm-2

B Level

1~3 cm-2

> 2 cm-2

C Level

>= 4 cm-2

 

Standard Thickness

350 ± 20 μm;  280 ± 20 μm

350 ± 20 μm;  500 ± 20 μm

Orientation

C-axis <0001> ± 0.5º

Primary Orientation Flat
Secondary Orientation Flat

 

<1-100> ± 0. 5°, 16mm(2") / 30mm(4")
<11-20>±3º, 8mm(2") / 15mm(4")

TTV (Total Thickness Variation)

<= 15 μm

<= 15 μm

(BOW)

<= 20 μm

<= 20 μm

Conduction Type

N-type

Semi-insulating

N-type

Resistivity (300K)

< 0.5 Ω-cm

> 10E6 Ω-cm

< 0.5 Ω-cm

Dislocation Density

Less than 5 x 10E6 cm-2

Useable Surface Area

> 90%

Polishing

Front Surface: Ra< 0.2nm,Epi-ready polished

Back Surface: 1. Fine ground 2.Rough grinded

Gallium nitride, GaN substrate. GaN has a wide direct bandgap, strong atomic bonds and high thermal conductivity, etc., and it is a strong ability on anti-radiation, Not only is the short-wavelength optoelectronic materials, Also the replacement materials of high temperature semiconductor device, GaN can be used to make blue and green LED, or violet, ultraviolet light LD, ultraviolet detectors and high-frequency high-power electronic devices.

 
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