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Germanium substrate

Germanium substrate

 

Parameters and properties

Growth method

Czochralski

Density

5.323g/cm3

Crystal structure

Cubic

Melting point

937.4℃

Lattice constant

a=5.65754Å

 

 

 

Doped

Undoped

Sb-doped

In-doped or Ga-doped

Type

 /

N-type

P-type

Resistivity

>35Ωcm

0.001~30 Ω-cm

0.001~100 Ω-cm

Dislocation density
(EPD)

<4000 /cm2
<300 /cm2

<4000 /cm2
<300 /cm2

<4000 /cm2
<300 /cm2

Srandard product:

Orientation

<100>, <110>, <111> ±0.5º
Or others

Germanium single crystal Rod

Φ1"~Φ5" x 200mm (Length)

Standard dimensions

Φ2"(50.8mm), Φ3"(76.2mm), Φ4"(100mm)

Standard thickness

0.17mm, 0.4mm, 0.5mm, 0.6mm

Polishing 

Single side or Double side polished

 

Germanium(Ge) single crystal is an important semiconductor material that can be used to fabricate semiconductor devices, infrared optics, and solar cell substrates.
 
There are general two methods for growth Ge single crystal. The Ge single crystal is grown by Czochralski method (CZ) method or Vertical gradient freeze method (VGF method).
 
1 - Ge single crystal can be used as a transistor and is the first generation of transistor material.
2 - Since Ge has higher electron and hole mobility than silicon, Ge performs better than Si in high-speed switching circuits.
3 - Applications in infrared optics, mainly for the manufacture of infrared optical lenses and infrared optical windows that protect infrared optical lenses.
 
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