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Germanium substrate

Germanium substrate

 

The main properties parameters 

Growth method

Czochralski

Density

5.323g/cm3

Crystal structure

Cubic

Melting point

937.4℃

Lattice constant

a=5.65754Å

Germanium crystal Rod

1"~Φ5" x 200mm (Length)

 

Dopant

Un-doped

Sb-doped

In-doped or Ga-doped

Type

 /

N-type

P-type

Resistivity

>35Ωcm

0.01~15 Ω-cm

0.01~15 Ω-cm

Dislocation density
(EPD)

<4000 /cm2
<300 /cm2

<4000 /cm2
<300 /cm2

<4000 /cm2
<300 /cm2

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
Germanium substrate
 (Un-doped or N-type or P-type)
<100> ±0.5°
<100> with 9° off ±0.5°
<110> ±0.5°
<111> ±0.5°

Or other off-angle
 
10x10mm
10x5mm
5x5mm
20x20mm
φ2" x 0.5mm
φ4" x 0.175mm
φ4" x 0.5mm
φ6" x 0.625mm
Or others
0.2mm
0.5mm
1.0mm

Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
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Germanium(Ge) single crystal is an important semiconductor material that can be used to fabricate semiconductor devices, infrared optics, and solar cell substrates.
 
There are general two methods for growth Ge single crystal. The Ge single crystal is grown by Czochralski method (CZ) method or Vertical gradient freeze method (VGF method).
 
1 - Ge single crystal can be used as a transistor and is the first generation of transistor material.
2 - Since Ge has higher electron and hole mobility than silicon, Ge performs better than Si in high-speed switching circuits.
3 - Applications in infrared optics, mainly for the manufacture of infrared optical lenses and infrared optical windows that protect infrared optical lenses.
 
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