Germanium substrate
The main properties parameters |
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Growth method |
Czochralski |
Density |
5.323g/cm3 |
Crystal structure |
Cubic |
Melting point |
937.4℃ |
Lattice constant |
a=5.65754Å |
Germanium crystal Rod |
1"~Φ5" x 200mm (Length) |
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Dopant |
Un-doped |
Sb-doped |
In-doped or Ga-doped |
Type |
/ |
N-type |
P-type |
Resistivity |
>35Ωcm |
0.01~15 Ω-cm |
0.01~15 Ω-cm |
Dislocation density |
<4000 /cm2 |
<4000 /cm2 |
<4000 /cm2 |
Standard Specification | |||||
Product Name | Orientation | Standard Size | Thickness | Polishing | |
Germanium substrate (Un-doped or N-type or P-type) |
<100> ±0.5° <100> with 9° off ±0.5° <110> ±0.5° <111> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ2" x 0.5mm φ4" x 0.175mm φ4" x 0.5mm φ6" x 0.625mm Or others |
0.2mm 0.5mm 1.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
Inquiry Online |
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