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InP substrate

InP substrate

 

Standard Specifications
Single crystal
Dopant
Conductivity type
Carrier concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard substrate
InP
Undoped
  
N-type
(0.4-3) x 1016
(3.5-4) x 103
 ≤ 500
Φ2"x0.35mm
Φ3"x0.5mm
Φ4"x0.6mm
InP
S
N-type
(0.8-6) x 1018
(1.5-3.5) x 103
 ≤ 1000
Φ2"x0.35mm
Φ3"x0.5mm
Φ4"x0.6mm
InP
Zn
P-type
(0.6-6) x 1018
50-70
 ≤ 1000
Φ2"x0.35mm
Φ3"x0.5mm
Φ4"x0.6mm
InP
Te
Semi-insulating
  107-108
≥ 1000
 ≤ 5000
Φ2"x0.35mm
Φ3"x0.5mm
Φ4"x0.6mm
Orientation
<100>, <111> ±0.5º
Standard dimension(mm)
10x10x0.5mm, 10x10x0.35mm, 10x5x0.35mm
φ50.8 x 0.35mm, φ76.2 x 0.5mm, φ100 x 0.6mm
We can customize Specific specification upon requirements
Surface roughness
 Ra <=5A (0.5nm)
Polishing
 Single side polished or Double side polished
Packing
 class-100 clean bag, class-1000 clean room

InP single crystal material is used as one of the most important compound semiconductor material, use to produce optical communications material of InP-based laser diode (LD), it is the key materials of Light emitting diode (LED) and photodetector, These devices realized message transmit , dissemination, amplification, reception and other functions in fiber-optic communications. InP is also very suitable for high frequency devices such as high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) and others.

 
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