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InP substrate

InP substrate

 

Major Capability Parameter
Single crystal
Dopped
Conductivity type
Carrier concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard substrate
InP
Undoped
  
N-type
(0.4-3)*1016
(3.5-4)*103
 ≤ 500
Φ2"×0.35mm
Φ3"×0.5mm
Φ4"×0.6mm
InP
S
N-type
(0.8-6)*1018
(1.5-3.5)*103
 ≤ 1000
Φ2"×0.35mm
Φ3"×0.5mm
Φ4"×0.6mm
InP
Zn
P-type
(0.6-6)*1018
50-70
 ≤ 1000
Φ2"×0.35mm
Φ3"×0.5mm
Φ4"×0.6mm
InP
Te
Semi-insulating
  107-108
≥ 1000
 ≤ 5000
Φ2"×0.35mm
Φ3"×0.5mm
Φ4"×0.6mm
Orientation
<100>, <111> ±0.5º
Standard dimension(mm)
10×10×0.5mm, 10×10×0.35mm, 10×5×0.35mm
Dia50.8 x 0.35mm, Dia76.2 x 0.5mm, Dia100 x 0.5mm
Or upon customer's requirements
Surface roughness
 Ra <=5A (0.5nm)
Polishing
 One side or double side polished
Packing
 100 grade clean bag, 1000 grade clean room

InP single crystal material is used as one of the most important compound semiconductor material, use to produce optical communications material of InP-based laser diode (LD), it is the key materials of Light emitting diode (LED) and photodetector, These devices realized message transmit , dissemination, amplification, reception and other functions in fiber-optic communications. InP is also very suitable for high frequency devices such as high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) and others.

 
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