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KTaO3 substrate

KTaO3 substrate

 

The main performance parameters

Product Name

KTaO3 single crystal substrate/wafer

Crystal structure

Cubic, Perovskite, m3m

Lattice constant

a=3.989Å

Growth method

Top-seeded solution growth(TSSG)

Melting point

~1350℃

Density

7.015 g/cm3

Mohs hardness

Refractive index

2.226@633nm,   2.152@1539nm

Thermal conductivity

0.17 w/m.k@300K

Coefficient of thermal expansion

4.027 x 10-6/K)

Specific heat (temperature JK-1g-1)

0.378

Transparent bands (nm)

380~4000

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
KTaO3 substrate <100> ±0.5°
<110> ±0.5°
<111> ±0.5°
Or other off-angle
10x10mm
10x5mm
5x5mm
20x20mm
φ1" x 0.5mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
Inquiry Online

Potassium tantalate, KTaO3 substrate, KTaO3 single crystal is a novel crystal having a perovskite structure and pyrochlore, has broad market prospects in superconducting thin film applications. We can offer a variety sizes of KTaO3 single-crystal substrate. Can be used to produce a laser modulator, a digital-type deflector and semiconductor devices. Since the KTaO3 crystals from the absolute zero to its melting point (1645K) no phase change, and the unit cell parameters good match with superconductor YBCO ,

 

 
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