KTaO3 substrate
The main performance parameters |
|
Product Name |
KTaO3 single crystal substrate/wafer |
Crystal structure |
Cubic, Perovskite, m3m |
Lattice constant |
a=3.989Å |
Growth method |
Top-seeded solution growth(TSSG) |
Melting point |
~1350℃ |
Density |
7.015 g/cm3 |
Mohs hardness |
6 |
Refractive index |
2.226@633nm, 2.152@1539nm |
Thermal conductivity |
0.17 w/m.k@300K |
Coefficient of thermal expansion |
4.027 x 10-6/K) |
Specific heat (temperature JK-1g-1) |
0.378 |
Transparent bands (nm) |
380~4000 |
Standard Specification | |||||
Product Name | Orientation | Standard Size | Thickness | Polishing | |
KTaO3 substrate |
<100> ±0.5° <110> ±0.5° <111> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ1" x 0.5mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
Inquiry Online |
Potassium tantalate, KTaO3 substrate, KTaO3 single crystal is a novel crystal having a perovskite structure and pyrochlore, has broad market prospects in superconducting thin film applications. We can offer a variety sizes of KTaO3 single-crystal substrate. Can be used to produce a laser modulator, a digital-type deflector and semiconductor devices. Since the KTaO3 crystals from the absolute zero to its melting point (1645K) no phase change, and the unit cell parameters good match with superconductor YBCO ,
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