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LaSrAlO4 substrate

LaSrAlO4 substrate

 

Major capability parameter
Crystal structure
Tetragonal system
Growth method
Czochralski method
Unit cell constant
a=3.756Å   c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Standard Size (mm)
10x3,10x5,10x10,15x15,,20x15,20x20,
Dia. 15mm, Dia.20mm,Dia.1″(25.4mm),Dia.2″(50.8mm) 
Standard Thickness
0.5mm,1.0mm
Polishing
Single or double side polished
Crystal Orientation
<001>  
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon request
Ra:
≤5Å(5µm×5µm)
Pack
100 clean bag,1000 exactly clean bag

Strontium lanthanum aluminate, LaSrAlO4 substrate (single crystals). LaSrAlO4 from melting temperature to a lower temperature all not have luan crystal phase transition, and have the same structure to high-temperature superconductor YBCO, have a low coefficient of thermal expansion than other perovskite structure crystals. it can be able to deposited Films at a lower temperatures,  Thereby improving the lattice mismatch and reduce stress.

 

 
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