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LaSrAlO4 substrate

LaSrAlO4 substrate

 

The main performance parameters

Product Name
LaSrAlO4 single crystal substrate
SrLaAlO4 single crystal substrate
Crystal structure
Tetragonal system
Growth method
Czochralski method
Lattice constant
a=3.756Å   c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Package
class-100 clean bag,class-1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
LaSrAlO4 substrate <001> ±0.5°
<100> ±0.5°
Or other off-angle
10x10mm
10x5mm
5x5mm

Or others
0.1mm
0.2mm
0.5mm
1.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
Inquiry Online

Strontium lanthanum aluminate, LaSrAlO4 substrate (single crystals). LaSrAlO4 from melting temperature to a lower temperature all not have luan crystal phase transition, and have the same structure to high-temperature superconductor YBCO, have a low coefficient of thermal expansion than other perovskite structure crystals. it can be able to deposited Films at a lower temperatures,  Thereby improving the lattice mismatch and reduce stress.

 

 
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