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LaAlO3 substrate

LaAlO3 substrate

 

The main performance parameters

Crystal system
Hexagonal (room temperature)
Cubic (> 435 ℃)
Lattice constant
Hexagonal a = 5.357A c = 13.22 A
Cubic a = 3.821 A
Growth method
Czochralski method
Melting point
2080℃
Density
6.52 (g / cm 3)
Hardness
6-6.5 (mohs)
Thermal expansion coefficient
9.4x10 -6 / ℃
Permittivity
ε = 21
Loss tangent (10ghz)
~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k
Color and Appearance
Brown-yellow to brown
Feature
Suitable for microwave electronics
Edge orientation
According to requirements
Other direction of substrate
We can customize specific orientation upon requirements, 
Package
class-100 clean bag, in class-1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
LaAlO3 substrate <100> ±0.5°
<110> ±0.5°
<111> ±0.5°

Or other off-angle
 
10x10mm
10x5mm
5x5mm
20x20mm
φ2" x 0.5mm
φ3" x 0.5mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm

Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
Inquiry Online

Lanthanum aluminate (LaAlO3) substrate single crystal is the most important industrialized, large-size high-temperature superconducting thin film single crystal substrate material. It is grown by Czochralski method, we can get two inches in diameter and larger single crystals and the substrate. It works with high-temperature superconducting materials lattice well matched, such as YBaCuO. Lower dielectric constant, low loss microwave, and thus suitable for production of high-temperature superconducting microwave electronic devices (such as  high-temperature superconducting microwave filters in the remote communications.). Has great practical and potential applications.

 

 
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