LaAlO3 substrate
The main performance parameters |
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Crystal system
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Hexagonal (room temperature)
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Cubic (> 435 ℃)
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Lattice constant
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Hexagonal a = 5.357A c = 13.22 A
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Cubic a = 3.821 A
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Growth method
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Czochralski method
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Melting point
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2080℃
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Density
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6.52 (g / cm 3)
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Hardness
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6-6.5 (mohs)
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Thermal expansion coefficient
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9.4x10 -6 / ℃
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Permittivity
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ε = 21
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Loss tangent (10ghz)
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~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k
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Color and Appearance
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Brown-yellow to brown
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Feature
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Suitable for microwave electronics
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Edge orientation
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According to requirements | |
Other direction of substrate
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We can customize specific orientation upon requirements,
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Package
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class-100 clean bag, in class-1000 clean room
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Standard Specification | |||||
Product Name | Orientation | Standard Size | Thickness | Polishing | |
LaAlO3 substrate |
<100> ±0.5° <110> ±0.5° <111> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ2" x 0.5mm φ3" x 0.5mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
Inquiry Online |
Lanthanum aluminate (LaAlO3) substrate single crystal is the most important industrialized, large-size high-temperature superconducting thin film single crystal substrate material. It is grown by Czochralski method, we can get two inches in diameter and larger single crystals and the substrate. It works with high-temperature superconducting materials lattice well matched, such as YBaCuO. Lower dielectric constant, low loss microwave, and thus suitable for production of high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in the remote communications.). Has great practical and potential applications.
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