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Quartz(SiO2) substrate

Quartz(SiO2) substrate

Click here for: Fused Silica Quartz glass substrate/wafer
 

The main performance parameters

Product Name

Quartz single crystal substrate/wafer
SiO2 single crystal substrate/wafer

Growth method

Hydrothermal method

Crystal structure

Hexagonal crystal system

Lattice Constant

A=4.914 - a c=5.405 - A

Melting point

1610℃ (phase transition point: 573.1 ℃)

Density

2.684 g/cm3

Mohs Hardness

7

Heat Capacity

0.18 cal/gm

Thermal conductivity

0.0033 cal/cm ℃

Thermoelectric constant

1200 uv/℃  (300℃)

Refractive index

1.544

The coefficient of thermal expansion

α 11:13.71 * 106 ℃ / α 33:7.48 * 106 / ℃

The value of Q

1.8 x 106 Min

Sound velocity and table level

3160 (m/sec)

Constant frequency

1661 (kHz/mm)

Piezoelectric coupling

K2 (%) BAW: 0.65 SAW: 0.14

Polished surface

Bending: 3"<20um,  4" <30um
Primary orientation flat: 16mm(2-inch), 22mm(3-inch), 32mm(4-inch), 

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
Quartz single crystal substrate X-cut ±0.5°
Y-cut ±0.5°
Z-cut ±0.5°
AT-cut ±0.5°
ST-cut ±0.5°
Or other off-angle
10x10mm
10x5mm
5x5mm
20x20mm
φ2" x 0.5mm
φ3" x 0.5mm
φ4" x 1.0mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
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Quartz crystals are grown in an autoclave by hydrothermal method and have both Levo and Dextral shape.
 
Quartz crystals are used in electronics, precision optics and laser technology, optical communications, X-ray optics, and pressure sensors, due to its piezoelectric properties, low coefficient of thermal expansion, excellent mechanical and optical properties,

 

 
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