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Quartz(SiO2) substrate

Quartz(SiO2) substrate

Click here for: Fused Silica glass substrate/wafer
 

The main performance parameters

Growth method

Hydrothermal method

Crystal structure

Hexagonal crystal system

Lattice Constant

A=4.914 - a c=5.405 - A

Melting point (c)

1610℃ (phase transition point: 573.1 ℃)

Density

2.684g/cm3

Hardness

7 (Mohs)

Hot melt

0.18 cal/gm

Thermal conductivity

0.0033 cal/cm ℃

Thermoelectric constant

1200 uv/℃  (300℃)

Refractive index

1.544

The coefficient of thermal expansion

α 11:13.71 * 106 ℃ / α 33:7.48 * 106 / ℃

The value of Q

1.8 x 106 Min

Sound velocity and table level

3160 (m/sec)

Constant frequency

1661 (kHz/mm)

Piezoelectric coupling

K2 (%) BAW: 0.65 SAW: 0.14

Crystal orientation

Y-cut, X-cut, Z-cut, or 30~42.75 degree off.

Primary Orientation Flat: Uppon requirements ±30'.
Secondary Orientation Flat: Uppon requirements

Polished surface

Extension: single or double throw polishing throw a Ra<10
Working area: substrate diameter -3mm
Bending: 3"<20um,  4" <30um
The work area free of edge collapse, on the edge, edge collapse width <0.5mm
Pits and scratches: each piece of <3, every 100 <20

Standard thickness

0.5mm, 1.0mm 
±0.05mm,

Standard diameter

2 "(50.8mm),  3" (76.2mm), 4" (100mm) ±0.2mm
Primary Orientation Flat: 22 ±1.5mm (3"), 32 ±3mm (4 ")
Secondary Orientation Flat: 10mm ±1.5mm

 

Quartz crystals are grown in an autoclave by hydrothermal method and have both Levo and Dextral shape.
 
Quartz crystals are used in electronics, precision optics and laser technology, optical communications, X-ray optics, and pressure sensors, due to its piezoelectric properties, low coefficient of thermal expansion, excellent mechanical and optical properties,

 

 
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