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TGG substrate

TGG substrate

 

The main performance parameters

Molecular Formula

Tb3Ga5O12

Lattice Constant

a=12.355 A

Growth method

Czochralski method

Melting Point

1725 ℃

Density

7.13 g/cm3

Mohs Hardness

8

Refractive index

1.954 at 1064nm

Verdet constant

0.12 min/Oe. Cm at1064nm

TGG Standard Specification

Crystal Orientation

<111> 

Wavefront distortion

<1/8 wave total (633nm measurement)

Extinction ratio

>30dB

Size tolerance

+/-0.05mm

Chamfer

0.13MM (+0.00mm, -0.08mm) at 45° ~ + 5°

Crystal processing quality

Flatness

<1/10 wave at 633nm

Parallelism

<1 minutes of arc

Verticality

<1 degree

Packing

100 class clean bag, 1000 class clean room

Standard Size

Dia30, 10x10, 5x5,3x3mm

Special specification

We can customize Specific specification upon requirements

Terbium Gallium Garne(TGG) single crystal with large magnetic-optical constants, low loss, high thermal conductivity and high laser damage value, widely used in YAG, Ti-doped sapphire, multi-stage amplification, Annular, seed injected laser. 

 

TGG single crystal is the best magneto-optical material for Faraday rotators and isolators. The suitable wavelengths are between 400-1100nm (excluding 470nm-500nm).  The Faraday rotator consists of a TGG ingot and a specially designed magnet. The polarization direction of the beam passing through the magneto-optical material will deflect under the action of a magnetic field,

 
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