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ZnO substrate

ZnO substrate

 

The main performance parameters

Product Name
Zinc oxide(ZnO) single crystal substrate
Crystal structure
Hexagonal system
Lattice constant
a=3.252Å    c=5.313 Å
Density
5.7(g/cm3)
Hardness
4(mohs)
Melting point
1975℃
Thermal expansion
6.5 x 10-6 /℃//a     3.7 x 10-6 /℃//c
Heat capacity
0.125 cal /g.m
Thermoelectric constant
1200 mv/k @ 300 ℃
Thermal conductivity
0.006 cal/cm/k
Penetration range
0.4-0.6 um > 50% at 2mm
Dopant:
Un-doped, Ga-doped, In-doped
Packing
class-100 clean bag,class-1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
ZnO substrate (Un-doped) <0001> ±0.5°
<11-20> ±0.5°
<10-10> ±0.5°
Or other off-angle
10x10mm
10x5mm
5x5mm
15x15mm
25 x 25mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<5A(0.5nm)
Inquiry Online

ZnO substrate. Zinc oxide (ZnO) is a good GaN films substrate material, has 60mev exciton binding energy and 3.73ev bandwidth at room temperature, making it be the UV and visible light-emitting materials.

Meanwhile, since having a transparent visible region and large electromechanical coupling coefficient, to make the gas molecules adsorbed on its surface. There is hope to be widely use in high peak energy of energy limiter devices, large-diameter high-quality GaN substrate, wireless communication outside 5GHz in the future, High-temperature high-energy electronic devices, High electric equipment and other aspects.

 

 
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