SiO2 single crystal
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Major capability parameter
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Growth method
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hydro-thermal method
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Crystal Structure
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M6
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Unit cell constant
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a=4.914Å c=5.405 Å
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Melt point（℃）
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1610℃
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Density
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2.684g/cm3
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Hardness
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7（mohs）
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Thermal conductivity
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0.0033cal/cm℃
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Planned constant
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1200uv/℃（300℃）
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Index of refraction
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1.544
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Thermal expansion
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α11：13.71×106 / ℃ α33：7.48×106 /℃
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Frequency constant
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1661（kHz/mm）
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Crystal orientation
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Y、X or Z，30º~42.75 º ±5
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Polishing
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Single or double Ra<10Å
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Thickness
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0.5mm±0.05mm TTV<5um
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Diameter
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Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning：22±1.5mm (Φ3″) 32±3.0 (Φ4″) Secondary positioning ：10mm±1.5mm |
Silicon dioxide (SiO2) single crystal is an excellent substrate for the microwave filters of wireless communications industry .
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