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Silicon (Si) single crystal

Silicon (Si) single crystal

 

Major capability parameter
Crystal Structure
M3
Melt point(℃)
1420
Density
2.4(g/cm3)
Doped material
 No doped
Type
P
Resistivity
10-3~40Ωcm
E P D
≤100∕cm2
O Content(∕cm3)
≤1~1.8×1018
C Content(∕cm3)
≤5×1016
Size
10×3m、10×5m、10×10mm、15×15mm、20×15mm
Special size and orientation are available upon request
Thickness
0.5mm、1.0mm
Size Tolerances
<±0.1mm
Thickness Tolerances
<±0.015mmspecial in<±0.005mm)
Polishing
Single or double
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Crystal orientation
<100>、<110>、<111>
Pack
100 clean bag,1000 exactly clean bag

 

We supply Silicon  (Si)  single crystal ,  Silicon semiconductor crystals material.  used as semiconductor materials, high-power transistors, rectifiers, solar cells.  Welcome to order various sizes and specifications of Silicon single crystal.

Our Silicon single crystal is growth by the methods of Czochralski (CZ) and Floating Zone (FZ), and epitaxial method. The Czochralski method Silicon single crystal is mainly used for a semiconductor integrated circuit, a diode, epitaxial wafer, and solar cell.

 
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    • Biotain Crystal Co., Ltd.
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