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Silicon carbide (SiC) single crystal

Silicon carbide (SiC) single crystal

 

Major capability parameter
Growth method
MOCVD
Crystal Structure
M6
Unit cell constant
a=3.08 Å     c=15.08 Å 
Sequence
ABCACB
Direction
<0001> 3.5 º
With clearance
2.93 eV
Hardness
9.2(mohs)
Heat travels @300K
5 W/ cm.k
Dielectric constants
e(11)=e(22)=9.66 e(33)=10.33
Size
10x3,10x5,10x10,15x15,,20x15,20x20,
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon request
Ra:
≤5Å(5µm×5µm)
Pack
100 clean bag,1000 exactly clean bag

 

We supply Silicon carbide  (SiC)  crystal  ,  Silicon carbide semiconductor crystals material. Welcome to order various sizes and specifications of SiC single crystal.

 

The main application areas:


1. high frequency power electronic devices (Schottky diodes, MOSFET, JFET, BJT, PiN diodes, IGBT)
2. optoelectronic devices: mainly used in GaN / SiC blue LED substrate material (GaN / SiC) LED

 

 
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