Silicon carbide (SiC) single crystal
Major capability parameter
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Growth method
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MOCVD
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Crystal Structure
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Hexagonal
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Lattice constant
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a=3.08 Å, c=15.08 Å
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Sequence
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ABCACB
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Crystal Type
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4H-SiC, 6H-SiC
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Dopant Type
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N-type, Semi-insulating/V-doped, Semi-insulating/Undoped
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Orientation
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<0001> or <0001> 4.0º
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Band gap
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3.23 eV
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Hardness
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9.2(mohs)
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Resistivity
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0.015~0.028 ohm-cm(N-type), >1E5 ohm-cm (Semi-insulating)
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Coefficient of thermal expansion |
(4~5) x 10-6/K
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Thermal conductivity @300K
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3.7~4.9 W/ cm.K
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Dielectric constant
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e(11)=e(22)=9.66 e(33)=10.33
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Standard Size
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5x5mm, 10x5mm, 10x10mm, 15x15mm, 20x20mm,
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φ2”x0.33mm, φ4”x0.35mm, φ4”x0.5mm, φ6”x0.35mm, φ6”x0.35mm, 15x15x0.5mm
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Thickness
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0.35mm, 0.5mm, 1.0mm or others
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Polishing
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Single side polished or Double side polished
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Surface Roughness
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Ra≤5Å(5x5µm)
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Packing
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100 clean bag,1000 exactly clean bag
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We supply Silicon carbide (SiC) crystal , Silicon carbide semiconductor crystals material. Welcome to order various sizes and specifications of SiC single crystal.
The main application areas:
1. high frequency power electronic devices (Schottky diodes, MOSFET, JFET, BJT, PiN diodes, IGBT)
2. optoelectronic devices: mainly used in GaN / SiC blue LED substrate material (GaN / SiC) LED
Contact Us
- BIOTAIN CRYSTAL CO., LIMITED
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- Fax: (+86) 0597 2212602
- Email: sales@crystal-material.com
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