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Silicon carbide (SiC) single crystal

Silicon carbide (SiC) single crystal

 

Major capability parameter
Growth method
MOCVD
Crystal Structure
Hexagonal
Lattice constant
a=3.08 Å,  c=15.08 Å 
Sequence
ABCACB
Crystal Type
4H-SiC, 6H-SiC
Dopant Type
N-type, Semi-insulating/V-doped, Semi-insulating/Undoped
Orientation
<0001> or <0001> 4.0º
Band gap
3.23 eV
Hardness
9.2(mohs)
Resistivity
0.015~0.028 ohm-cm(N-type), >1E5 ohm-cm (Semi-insulating)
Coefficient of thermal expansion
(4~5) x 10-6/K
Thermal conductivity @300K
3.7~4.9 W/ cm.K
Dielectric constant
e(11)=e(22)=9.66 e(33)=10.33
Standard Size
5x5mm, 10x5mm, 10x10mm, 15x15mm, 20x20mm, 
φ2”x0.33mm, φ4”x0.35mm, φ4”x0.5mm, φ6”x0.35mm, φ6”x0.35mm, 15x15x0.5mm
Thickness
0.35mm, 0.5mm, 1.0mm or others
Polishing
Single side polished or Double side polished
Surface Roughness
Ra≤5Å(5x5µm)
Packing
100 clean bag,1000 exactly clean bag

 

We supply Silicon carbide  (SiC)  crystal  ,  Silicon carbide semiconductor crystals material. Welcome to order various sizes and specifications of SiC single crystal.

 

The main application areas:


1. high frequency power electronic devices (Schottky diodes, MOSFET, JFET, BJT, PiN diodes, IGBT)
2. optoelectronic devices: mainly used in GaN / SiC blue LED substrate material (GaN / SiC) LED

 

 
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