BIOTAIN CRYSTAL > Substrate Materials > Single crystal substrates > Product Information > Next :GaSb substrate
GaAs substrate
Standard Specification |
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Dopant
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Conduction type
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Carrier concentration
(cm-3) |
Dislocation density
(cm-2)
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Growth method
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Standard substrate
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GaAs
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Un-doped
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Semi-insulating
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/
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< 5000 /cm2 Or <1000 /cm2 Or <500 /cm2 |
LEC
HB
VGF
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Dia6"x0.65mm
Dia4"x0.6mm Dia3"x0.5mm
Dia2"x0.35mm
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Si-doped
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N-type
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>5x1017
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Cr-doped
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Semi-insulating
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/
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Fe-doped
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N-type
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~2×1018
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Zn-doped
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P-type
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>5×1017
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Orientation
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<100>
<100> with 2° off toward <111> <100> with 15° off toward <111> Orientation tolerance: ±0.5° |
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Standardd Size
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25x25x0.5mm, 10x10x0.5mm, 10x5x0.5mm, 5x5x0.5mm
φ2"x0.35mm, φ3"x0.5mm, φ4"x0.6mm, φ6"x0.65mm
Special size and orientation are available upon requirements
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Polishing
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Single side polished or Double side polished
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Surface roughness
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Ra:<=5A (0.5nm)
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Package
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class-100 clean bag,class-1000 clean room
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Gallium arsenide (GaAs) crystal has good chemical stability, High hardness, resistance to harsh environment capability, It has a good permeability in 2μm-14μm spectral range, Widely used in thermal infrared imaging systems, high-power CO2 laser optical system and FLIR systems.
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