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InP substrate

Standard Specifications
Single crystal	Dopant	Conductivity type		Carrier concentration (cm-3)	Mobility (cm2/V.s)	Dislocation density (cm-2)	Standard substrate
InP	Undoped	N-type		(0.4-3) x 10¹⁶	(3.5-4) x 10³	≤ 500	Φ2"x0.35mm Φ3"x0.5mm Φ4"x0.6mm
InP	S	N-type		(0.8-6) x 10¹⁸	(1.5-3.5) x 10³	≤ 1000	Φ2"x0.35mm Φ3"x0.5mm Φ4"x0.6mm
InP	Zn	P-type		(0.6-6) x 10¹⁸	50-70	≤ 1000	Φ2"x0.35mm Φ3"x0.5mm Φ4"x0.6mm
InP	Te	Semi-insulating		10⁷-10⁸	≥ 1000	≤ 5000	Φ2"x0.35mm Φ3"x0.5mm Φ4"x0.6mm
Orientation			<100>, <111> ±0.5º
Standard dimension(mm)			10x10x0.5mm, 10x10x0.35mm, 10x5x0.35mm φ50.8 x 0.35mm, φ76.2 x 0.5mm, φ100 x 0.6mm We can customize Specific specification upon requirements
Surface roughness			Ra <=5A (0.5nm)
Polishing			Single side polished or Double side polished
Packing			class-100 clean bag, class-1000 clean room

InP single crystal material is used as one of the most important compound semiconductor material, use to produce optical communications material of InP-based laser diode (LD), it is the key materials of Light emitting diode (LED) and photodetector, These devices realized message transmit , dissemination, amplification, reception and other functions in fiber-optic communications. InP is also very suitable for high frequency devices such as high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) and others.

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InP substrate

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