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Thermal oxide Silicon wafer

Thermal oxide Silicon wafer

Standard Specifications

Product Name

Thermal oxide Silicon wafer (SiO2/Si)
Oxide layer on Silicon wafer
Thermal oxidation of Silicon wafer

 

 

Oxide-layer(SiO2 layer)

25nm, 50nm, 100nm,  285nm, 300nm, 500nm, 1um, 2μm, 5μm or others

Oxidation surface

Single sided oxidation, Double sided oxidation

Oxidation process

Dry-oxidation, Wet-oxidation,

 

 

Conductivity type/Dopant

N-type/Phos-doped or N-type/As-doped or P-type/Boron-doped or Un-doped

Orientation

<100> or <111>

Diameter of Silicon wafer

2"(50.8mm), 3"(76.2mm), 4"(100mm), 6"(150mm), 8"(200mm), 12"(250mm)

Thickness of Silicon wafer

280um, 380um, 525um, 675um, 725um

Resistivity (Ohm-cm)

0.001~0.005, 0.01~0.09, 0.1~0.9, 1~10, 1~100, >1000, >10000, >20000

Polishing

Single side polished or Double side polished

Surface Roughness

Ra<5A (0.5nm)

 

Standard Specifications
Product Name Orientation Standard Size Oxide-layer Polishing  
Thermal oxide Silicon wafer

(Un-doped or P-type or N-type)
<100> ±0.5°
<110> ±0.5°
<111> ±0.5°


Or others
 
φ2" x 0.28mm
φ3" x 0.38mm
φ4" x 0.5mm
φ6" x 0.625mm
φ8" x 0.725mm
φ12" x 0.775mm
Or others
25nm
50nm
100nm
200nm
285nm
300nm
500nm
1μm
2μm
5μm

Or others
SSP or DSP

Oxide-layer on One side or Both side
Send Inquiry

 


The Thermal oxide Silicon wafer is growth an oxide-layer(SiO2) on Silicon wafer, also name as "SiO2 + Si wafer". Growth a good quality oxide-layer on the surface of Silicon wafer is important to the entire semiconductor integrated circuit fabrication process. 
 
The Thermal oxide SiO2-layer is not only as a masking layer for ion implantation or thermal diffusion, and also a passivation layer that protects the surface of the device from the surrounding environment. It's not just an electrically isolated insulation between the device and another device. It is also a major component of MOS processes and electrical isolation in multilayer metallization systems.

We can offer Thermal oxide Silicon wafer in 2~8 inch size, and with oxide-layer thickness from 25nm ot over 5μm. We can also pre-dice wafer to small size like 10x10mm or 5x5mm or 20x20mm or 25x25mm or others.

 

 

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