Ga2O3 substrate
Gallium oxide, Ga2O3 single crystal | 2inch substrates | 10*15mm substrates | |||||
Orientation | (-201) | (-201) | (-201) | (010) | (010) | (010) | |
Dopant | Sn | Un-doped | Sn | Sn | Un-doped | Fe | |
Conductivity | n-type | n-type | n-type | n-type | n-type | Insulation(>1010 | |
Nd-Na(cm-3) | 5E17~9E18 | 5E17 or less | 5E17~9E18 | 1E18~9E18 | 1E17~5E17 | - | |
Dimentions | A-B(mm) | 50.8±0.3 | 50.8±0.3 | 15±0.3 | 15±0.3 | 15±0.3 | 15±0.3 |
C-D(mm) | 41~49.8 | 41~49.8 | 10±0.3 | 10±0.3 | 10±0.3 | 10±0.3 | |
Thickness | 0.68±0.02 | 0.68±0.02 | 0.68±0.02 | 0.5±0.02 | 0.5±0.02 | 0.5±0.02 | |
Reference(m | Fig.1 | Fig.1 | Fig.2 | Fig.3 | Fig.3 | Fig.3 | |
Offset angle (degree) |
[010]:0±0.4 | [010]:0±0.4 | [010]:0±0.4 | 丄[102]:0±1 | 丄[102]:0±1 | 丄[102]:0±1 | |
[102]:0.7±0.4 | [102]:0.7±0.4 | [102]:0.7±0.4 | [102]:0±1 | [102]:0±1 | [102]:0±1 | ||
FWHM(arcsec) | [010]:150 or less | [010]:150 or less | [010]:150 or less | 丄[102]:150 or | 丄[102]:150 or | 丄[102]:150 or | |
[102]:150 or less | [102]:150 or less | [102]:150 or less | [102]:150 or less | [102]:150 or less | [102]:150 or less | ||
Surface | Front | CMP | CMP | CMP | CMP | CMP | CMP |
Back | Rough | Rough | Rough | Rough | Rough | Rough |
Gallium oxide (Ga2O3) single crystal is a wide-bandgap semiconductor material. Gallium oxide (Ga2O3) has broad application prospects in optoelectronic devices, it used as an insulating layer for Ga-based semiconductor materials, and as an ultraviolet filter.
There are five crystalline phases of Ga2O3, but beta-Ga2O3 is the only one that can exist stably at high temperature. β-Ga2O3 is a new type of ultra-wide bandgap transparent semiconductor material with a forbidden band width of about Eg=4.8 eV, which suitable for manufacturing high power vertical structure power devices with high current density. It has application prospects in the fields of ultraviolet detectors, light-emitting diodes (LEDs) and gas sensors.
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