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6H-SiC, 4H-SiC substrate

The main performance parameters
Product Name	Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
Growth method	MOCVD
Crystal Structure	6H, 4H
Lattice Parameters	6H(a=3.073 Å c=15.117 Å), 4H(a=3.076 Å c=10.053 Å )
Stacking Sequence	6H: ABCACB, 4H: ABCB
Grade	Production Grade, Research Grade, Dummy Grade
Conductivity type	N-type or Semi-Insulating
Band-gap	3.23 eV
Hardness	9.2（mohs）
Thermal Conductivity @300K	3.2~4.9 W/ cm.K
Dielectric constants	e(11)=e(22)=9.66 e(33)=10.33
Resistivity	4H-SiC-N: 0.015~0.028 Ω·cm, 6H-SiC-N: 0.02~0.1 Ω·cm, 4H/6H-SiC-SI: >1E7 Ω·cm
Packing	Class 100 clean bag, in class 1000 clean room

Standard Specification
Product Name	Orientation	Standard Size	Thickness	Polishing
6H-SiC substrate 4H-SiC substrate	<0001> <0001> 4° off toward <11-20> <11-20> <10-10> Or other off-angle	10x10mm 10x5mm 5x5mm 20x20mm φ2" x 0.35mm φ3" x 0.35mm φ4" x 0.35mm φ4" x 0.5mm φ6" x 0.35mm Or others	0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others	Fine ground Single side polished Double side polished Roughness: Ra<3A(0.3nm)	Inquiry Online

SiC single crystal has many excellent properties, high thermal conductivity, high saturated electron mobility, strong anti-voltage breakdown, etc. Suitable for preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.

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6H-SiC, 4H-SiC substrate

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