ZnO substrate
The main performance parameters |
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Product Name
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Zinc oxide(ZnO) single crystal substrate
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Crystal structure
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Hexagonal system
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Lattice constant
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a=3.252Å c=5.313 Å
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Density
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5.7(g/cm3)
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Hardness
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4(mohs)
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Melting point
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1975℃
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Thermal expansion
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6.5 x 10-6 /℃//a 3.7 x 10-6 /℃//c
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Heat capacity
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0.125 cal /g.m
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Thermoelectric constant
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1200 mv/k @ 300 ℃
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Thermal conductivity
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0.006 cal/cm/k
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Penetration range
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0.4-0.6 um > 50% at 2mm
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Dopant:
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Un-doped, Ga-doped, In-doped
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Packing
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class-100 clean bag,class-1000 clean room
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Standard Specification | |||||
Product Name | Orientation | Standard Size | Thickness | Polishing | |
ZnO substrate (Un-doped) |
<0001> ±0.5° <11-20> ±0.5° <10-10> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 15x15mm 25 x 25mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
Inquiry Online |
ZnO substrate. Zinc oxide (ZnO) is a good GaN films substrate material, has 60mev exciton binding energy and 3.73ev bandwidth at room temperature, making it be the UV and visible light-emitting materials.
Meanwhile, since having a transparent visible region and large electromechanical coupling coefficient, to make the gas molecules adsorbed on its surface. There is hope to be widely use in high peak energy of energy limiter devices, large-diameter high-quality GaN substrate, wireless communication outside 5GHz in the future, High-temperature high-energy electronic devices, High electric equipment and other aspects.
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