AlN ceramic substrate/plate
The main performance parameters |
|
Product Name |
Aluminum Nitride(AlN) ceramic plate/substrate |
Material |
Aluminum Nitride(AlN) |
Density (g/cm3) |
> 3.33 |
Water Absorption |
0 % |
Color |
Gray |
Dielectric Constant |
8~10 (1MHz) |
Flexural Strength |
>450 Mpa |
Dielectric Strength |
> 17 KV/mm |
Volume resistivity (20°C) |
> 10E13 ohm-cm |
Thermal Conductivity (20°C) |
>170 W/(m.K) |
Thermal Expansion Coefficient (10-6/°C) |
2~3 (20~300°C) |
Other options |
Alumina ceramic, Zirconia(YSZ) ceramic, Silicon Nitride(Si3N4) ceramic |
Standard specifications | |||||
Product Name | Color/Purity/Method | Size | Thickness | Polishing | |
AlN ceramic substrate | Gray |
114.3 x 114.3mm 101.6 x 101.6mm 100 x 100mm 76.2 x 76.2mm 50 x 50mm 10 x 10mm φ50.8mm φ100mm Or others |
0.1mm 0.25mm 0.385mm 0.5mm 0.635mm 1.0mm 2.0mm Or others |
Un-polished surface Single side polished Double side polished Unpolished: Ra 0.2~0.75um
Polished: Ra 0.02~0.05um
Best Polished: Ra <10 nm
|
Inquiry Online |
The Aluminum Nitride ceramic substrate is mainly used as High-performance substrate materials and packaging materials in high-density hybrid circuits, microwave power devices, power electronics, optoelectronic components, and semiconductor refrigeration devices. AlN ceramic substrate with high thermal conductivity, good electrical properties, thermal expansion coefficient close to Silicon wafer, non-toxic, is an ideal material to replace BeO ceramics, is an ideal large-scale integrated circuit heat sink substrate and packaging materials.
AlN ceramic substrate has excellent thermal conductivity (5-10 times than Alumina ceramic substrate), low dielectric constant and dielectric loss, reliable insulation properties, excellent mechanical properties, non-toxic, high temperature resistance, chemical resistance, And similar to the thermal expansion coefficient of silicon, widely used in communications devices, high-brightness LEDs, power electronics and other industries.
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