LiNbO3 substrate
The main performance parameters |
|
Growth method |
Czochralski method |
Crystal structure |
Trigonal system |
Lattice constant |
a=b=5.148Å c=13.863 Å |
Melting point |
1250℃ |
Curie temperature |
1142 ℃ |
Density |
4.64 g/cm3 |
Mohs Hardness |
5 |
Spectral transmission range |
0.4-2.9um |
Refractive index |
No=2.286 ne=2.203 (632.8nm) |
Nonlinear coefficient |
D33=34.45, d31=d15=5.95, d22=13.07 (PMV-1) |
Electro-optic coefficient |
γ13=8.6,γ22=3.4,γ33=30.8,γ51=28.0,γ22=6.00(pmv-1) |
Spectral transmission range |
370 - 5000nm >68% (632.8nm) |
Thermal expansion coefficient |
A11=15.4 x 10-6/k, a33=7.5 x 10-6/k |
Standard specifications:
Grade: |
Optical grade LiNbO3 |
SAW grade LiNbO3 |
Orientation |
X-cut, Z-cut (+/-0.2°) |
Z-cut, Y-cut, Y-cut 36° off, Y-cut 64° off, Y-cut 128° off |
Primary Orientation Flat |
22mm+/-2mm (3-inch) 32mm+/-2mm (4-inch) |
22mm+/-2mm (3-inch) 32mm+/-2mm (4-inch) |
Standard Size |
φ3"(76.2mm) +/-0.3mm |
φ3" (76.2mm) +/-0.3mm |
Thickness |
500μm +/-20μm Or Ultra thin wafer 20~60μm |
500μm +/-20μm Or Ultra thin wafer 20~60μm |
Polishing |
Single or Both side polished Surface Finish: 20/10 or 10/5 |
Single or Both side polished Surface Finish: 20/10 or 10/5 |
TTV |
≤10um |
≤10um |
Curie temperature |
1142℃ +/-0.7℃ |
1142℃ +/-3℃ |
Edge chamfer |
Edge rounding |
Edge rounding |
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