Quartz(SiO2) substrate

The main performance parameters

Product Name

Quartz single crystal substrate/wafer
SiO2 single crystal substrate/wafer

Growth method

Hydrothermal method

Crystal structure

Hexagonal crystal system

Lattice Constant

A=4.914 - a c=5.405 - A

Melting point

1610℃ (phase transition point: 573.1 ℃)

Density

2.684 g/cm³

Mohs Hardness

7

Heat Capacity

0.18 cal/gm

Thermal conductivity

0.0033 cal/cm ℃

Thermoelectric constant

1200 uv/℃  (300℃)

Refractive index

1.544

The coefficient of thermal expansion

α 11:13.71 * 10⁶ ℃ / α 33:7.48 * 10⁶ / ℃

The value of Q

1.8 x 10⁶ Min

Sound velocity and table level

3160 (m/sec)

Constant frequency

1661 (kHz/mm)

Piezoelectric coupling

K2 (%) BAW: 0.65 SAW: 0.14

Polished surface

Bending: 3"<20um,  4" <30um
Primary orientation flat: 16mm(2-inch), 22mm(3-inch), 32mm(4-inch),