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6H-SiC, 4H-SiC substrate

6H-SiC, 4H-SiC substrate

 

Major capability parameter
Growth method
MOCVD
Crystal Structure
6H,  4H
Lattice Parameters
6H(a=3.073 Å     c=15.117 Å),  
4H(a=3.076 Å     c=10.053 Å )
Stacking Sequence
6H: ABCACB,
4H: ABCB
Grade
Production Grade, Research Grade, Dummy Grade
Conductivity type
N-type or Semi-Insulating
Orientation
<0001> or <0001> 4º towards <11-20>
Orientation Tolerance
±0.5°
Band-gap
3.23 eV
Hardness
9.2(mohs)
Thermal Conductivity @300K
3.2~4.9 W/ cm.K
Dielectric constants
e(11)=e(22)=9.66 e(33)=10.33
Standard Size
10x3,10x5,10x10,15x15,,20x15,20x20,
Dia2” x 0.35mm, Dia4” x 0.35mm, Dia6” x 0.35mm,
Standard Thickness
0.35mm, 0.5mm,1.0mm
Polishing
Single or double side polished
Primary Flat
<10-10>±5º
Resistivity
4H-SiC-N: 0.015~0.028 Ω·cm,
6H-SiC-N: 0.02~0.1 Ω·cm,
4H/6H-SiC-SI: >1E5 Ω·cm
Surface roughness(Ra):
≤5Å(5µm×5µm)
Packing
100 grade clean bag,1000 grade exactly clean room


SiC single crystal has many excellent properties, high thermal conductivity, high saturated electron mobility, strong anti-voltage breakdown, etc. Suitable for preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.
 

 
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