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6H-SiC, 4H-SiC substrate

6H-SiC, 4H-SiC substrate

 

The main performance parameters

Product Name
Silicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
Growth method
MOCVD
Crystal Structure
6H,  4H
Lattice Parameters
6H(a=3.073 Å     c=15.117 Å),  
4H(a=3.076 Å     c=10.053 Å )
Stacking Sequence
6H: ABCACB,
4H: ABCB
Grade
Production Grade, Research Grade, Dummy Grade
Conductivity type
N-type or Semi-Insulating
Band-gap
3.23 eV
Hardness
9.2(mohs)
Thermal Conductivity @300K
3.2~4.9 W/ cm.K
Dielectric constants
e(11)=e(22)=9.66 e(33)=10.33
Resistivity
4H-SiC-N:         0.015~0.028 Ω·cm,
6H-SiC-N:        0.02~0.1 Ω·cm,
4H/6H-SiC-SI:  >1E7 Ω·cm
Packing
Class 100 clean bag, in class 1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
 6H-SiC substrate
 4H-SiC substrate
<0001>
<0001> 4° off toward <11-20>
<11-20>
<10-10>
Or other off-angle
10x10mm
10x5mm
5x5mm
20x20mm
φ2" x 0.35mm
φ3" x 0.35mm
φ4" x 0.35mm
φ4" x 0.5mm
φ6" x 0.35mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<3A(0.3nm)
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SiC single crystal has many excellent properties, high thermal conductivity, high saturated electron mobility, strong anti-voltage breakdown, etc. Suitable for preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.
 

 
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