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InAs substrate

The main performance parameters
	Dopant	Conductivity type		Carrier Concentration (cm^-3)	Mobility (cm2/V.s)	Dislocation density (cm^-2)	Standard Size
InAs	Un-doped	N-type		5 x 10¹⁶	2 x 10⁴	<5x10⁴	Φ2″x0.5mm Φ3″x0.6mm Φ4″x0.8mm
InAs	Sn-doped	N-type		(5-20) x 10¹⁷	>2000	<5x10⁴	Φ2″x0.5mm Φ3″x0.6mm Φ4″x0.8mm
InAs	Zn-doped	P-type		(1-20) x 10¹⁷	100-300	<5x10⁴	Φ2″x0.5mm Φ3″x0.6mm Φ4″x0.8mm
InAs	S-doped	N-type		(1-10) x 10¹⁷	>2000	<5x104	Φ2″x0.5mm Φ3″x0.6mm Φ4″x0.8mm
Orientation			<100> / <111> ±0.5° Or other off-angle
Standard Dimension			φ50.8x0.5mm, 10x10x0.5mm, 10x5x0.5mm
Surface roughness			(Ra):<=5A (0.5nm)
Polishing			Single side polished or Double side polished
TTV / Bow / Warp			2" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um) 3" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um) 4" wafer (TTV: <15 um, Bow: <15 um, Warp: <15 um)
Special specification			We can customize specific specification according to customer's requirements

Indium arsenide, InAs substrate. InAs single crystal as a substrate can be use to grown InAsSb / In-AsPSb, InNAsSb and other heterojunction materials, Produced wavelength 2 ~ 14μm infrared light-emitting devices, InAs single crystal substrate can also be use to epitaxial growth a superlattice structure material AlGaSb, Produce mid-infrared quantum cascade laser.

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InAs substrate

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