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InAs substrate

InAs substrate

 

The main performance parameters

 
Dopant
Conductivity type
Carrier Concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard Size
InAs
Un-doped
N-type
 5 x 1016
2 x 104
<5x104
Φ2″x0.5mm
Φ3″x0.6mm
Φ4″x0.8mm
InAs
Sn-doped
N-type
(5-20) x 1017
>2000
<5x104
Φ2″x0.5mm
Φ3″x0.6mm
Φ4″x0.8mm
InAs
Zn-doped
P-type
(1-20) x 1017
100-300
<5x104
Φ2″x0.5mm
Φ3″x0.6mm
Φ4″x0.8mm
InAs
S-doped
N-type
(1-10) x 1017
>2000
<5x104
Φ2″x0.5mm
Φ3″x0.6mm
Φ4″x0.8mm
Orientation <100> / <111> ±0.5°
Or other off-angle
Standard Dimension
φ50.8x0.5mm, 10x10x0.5mm, 10x5x0.5mm
Surface roughness
(Ra):<=5A (0.5nm)
Polishing
Single side polished or Double side polished
TTV / Bow / Warp 2" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um)
3" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um)
4" wafer (TTV: <15 um, Bow: <15 um, Warp: <15 um)
Special specification We can customize specific specification according to customer's requirements


Indium arsenide, InAs substrate. InAs single crystal as a substrate can be use to grown InAsSb / In-AsPSb, InNAsSb and other heterojunction materials, Produced wavelength 2 ~ 14μm infrared light-emitting devices, InAs single crystal substrate can also be use to epitaxial growth a superlattice structure material AlGaSb, Produce mid-infrared quantum cascade laser.

 

 
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