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InAs substrate

InAs substrate

 

Major Capability Parameter
Single crystal
Dopped
Conductivity type
Carrier Concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard Size
InAs
/
N     
     5*1016
2*104
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
Φ4″×0.8mm
InAs
Sn
N
(5-20)*1017
>2000
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
Φ4″×0.8mm
InAs
Zn
P
(1-20) *1017
100-300
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
Φ4″×0.8mm
InAs
S
N
(1-10)*1017
>2000
<5*104
Φ2″×0.5mm
Φ3″×0.6mm
Φ4″×0.8mm
Orientation <100> / <111> ±0.5°
Standard Dimension(mm)
Dia.50.8x0.5mm,10×10×0.5mm、10×5×0.5mm
Surface roughness
(Ra):<=5A
Polishing
One side or double side polished
  2" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um)
3" wafer (TTV: <10 um, Bow: <10 um, Warp: <15 um)
4" wafer (TTV: <15 um, Bow: <15 um, Warp: <15 um)

Indium arsenide, InAs substrate. InAs single crystal as a substrate can be use to grown InAsSb / In-AsPSb, InNAsSb and other heterojunction materials, Produced wavelength 2 ~ 14μm infrared light-emitting devices, InAs single crystal substrate can also be use to epitaxial growth a superlattice structure material AlGaSb, Produce mid-infrared quantum cascade laser.

 

 
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