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GaAs substrate

GaAs substrate

 

Major capability parameter
Single crystal
Doped
Conduction type
Carrier concentration
cm-3
Dislocation density
cm-2
Growth method
Standard substrate
GaAs
None
Si
/
<5×105
LEC
HB
VGF
Dia6"×0.65mm
Dia4"×0.6mm
Dia3"×0.5mm
Dia2"×0.35mm
Si
N
>5×1017
Cr
Si
/
Fe
N
~2×1018
Zn
P
>5×1017
Orientation
<100>
<100> with 2° off toward <111>
<100> with 15° off toward <111>

Orientation tolerance: ±0.5°
Standardd Size(mm)
25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm
Dia2"×0.35mm, Dia3"×0.5mm, Dia4"×0.6mm, Dia6"×0.65mm
Special size and orientation are available upon request
Surface roughness
Surface roughness(Ra):<=5A
Polishing
Single or double side polished
Pack
100 grade clean bag,1000 grade clean room

Gallium arsenide (GaAs) crystal has good chemical stability, High hardness, resistance to harsh environment capability, It  has a good permeability in 2μm-14μm spectral range, Widely used in thermal infrared imaging systems, high-power CO2 laser optical system and FLIR systems.

 
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