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GaAs substrate

GaAs substrate

 

Standard Specification

 /
Dopant
Conduction type
Carrier concentration
(cm-3)
Dislocation density
(cm-2)
Growth method
Standard substrate
GaAs
Un-doped
Semi-insulating
/
< 5000 /cm2
Or <1000 /cm2
Or <500 /cm2
LEC
HB
VGF
Dia6"x0.65mm
Dia4"x0.6mm
Dia3"x0.5mm
Dia2"x0.35mm
Si-doped
N-type
>5x1017
Cr-doped
Semi-insulating
/
Fe-doped
N-type
~2×1018
Zn-doped
P-type
>5×1017
Orientation
<100>
<100> with 2° off toward <111>
<100> with 15° off toward <111>

Orientation tolerance: ±0.5°
Standardd Size
25x25x0.5mm, 10x10x0.5mm, 10x5x0.5mm, 5x5x0.5mm
φ2"x0.35mm, φ3"x0.5mm, φ4"x0.6mm, φ6"x0.65mm
 
Special size and orientation are available upon requirements
Polishing
Single side polished or Double side polished
Surface roughness
Ra:<=5A (0.5nm)
Package
class-100 clean bag,class-1000 clean room


Gallium arsenide (GaAs) crystal has good chemical stability, High hardness, resistance to harsh environment capability, It  has a good permeability in 2μm-14μm spectral range, Widely used in thermal infrared imaging systems, high-power CO2 laser optical system and FLIR systems.

 
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