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Sapphire substrate

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The main performance parameters
Product Name	Sapphire single crystal substrate, Sapphire wafer, Al2O3 wafer
Crystal Structure	Hexagonal system
Orientation	C-plane (0001), A-plane (11-20), M-plane (10-10), R-plane (1-102)
Lattice Constant	a=4.748Å c=12.97Å
Density	3.98（g/cm3）
Melting Point	2040℃
Mohs Hardness	9
Coefficient of Thermal expansion	7.5 (x10-6/ oC)
Thermal conductivity		⊥c	//c
	23℃	0.055	26℃ 0.060
	77℃	0.040	70℃ 0.041
Dielectric Constant	~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Packing	Class-100 Clean bag, in class-1000 clean room

Standard Specification
Product Name	Orientation	Standard Size	Thickness	Polishing
Sapphire substrate Sapphire wafer	<0001> ±0.3° <11-20> ±0.3° <10-10> ±0.3° <1-102> ±0.3° Or other off-angle	10x10mm 10x5mm 5x5mm 20x20mm 100x100mm φ1" x 0.5mm φ2" x 0.43mm φ3" x 0.5mm φ4" x 0.65mm φ6" x 1.0mm Or others	0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others	Fine ground Single side polished Double side polished Roughness: Ra<3A(0.3nm) (Epi-ready)	Inquiry Online

Sapphire crystal has good thermal properties, excellent electrical properties and dielectric properties, And good thermostability, Thermal conductivity, Infrared permeability, chemical stability, High hardness, anti-chemical corrosion, Sapphire,Al2O3 are widely used in industrial, national defense and scientific research (such as high-temperature infrared windows, etc.). It is also a extensive use in monocrystalline substrate material.

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Sapphire substrate

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