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Sapphire substrate

Sapphire substrate

Click here for:  Alumina(Al2O3) ceramic substrate

 

The main performance parameters
Product Name Sapphire single crystal substrate, Sapphire wafer, Al2O3 wafer
Crystal Structure
Hexagonal system
Orientation
C-plane (0001), A-plane (11-20), M-plane (10-10), R-plane (1-102)
Lattice Constant
a=4.748Å  c=12.97Å
Density
3.98(g/cm3)
Melting Point
2040℃
Mohs Hardness
9
Coefficient of Thermal expansion
7.5  (x10-6/ oC)
Thermal conductivity
 
⊥c
//c
23℃
0.055
26℃ 0.060
77℃
0.040
70℃ 0.041
Dielectric Constant
~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
Packing
Class-100 Clean bag, in class-1000 clean room

 

Standard Specification
Product Name Orientation Standard Size Thickness Polishing  
Sapphire substrate
Sapphire wafer
<0001> ±0.3°
<11-20> ±0.3°
<10-10> ±0.3°
<1-102> ±0.3°
Or other off-angle
10x10mm
10x5mm
5x5mm
20x20mm
100x100mm
φ1" x 0.5mm
φ2" x 0.43mm
φ3" x 0.5mm
φ4" x 0.65mm
φ6" x 1.0mm
Or others
0.1mm
0.2mm
0.5mm
1.0mm
2.0mm
Or others
Fine ground
Single side polished
Double side polished

Roughness: Ra<3A(0.3nm)
(Epi-ready)
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Sapphire crystal has good thermal properties, excellent electrical properties and dielectric properties, And good thermostability, Thermal conductivity, Infrared permeability, chemical stability, High hardness, anti-chemical corrosion,  Sapphire,Al2O3 are widely used in industrial, national defense and scientific research (such as high-temperature infrared windows, etc.). It is also a extensive use in monocrystalline substrate material.

 
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