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GaSb substrate

GaSb substrate

 

Standard Specifications

/
Dopant
Conductivity type
Carrier concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard size
GaSb
Undoped
  P-type
(1~2) x 1017
600-700
《3000
Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm
GaSb
Zn-doped
  P-type
(5~100) x 1017
200-500
《3000
Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm
GaSb
Te-doped
  N-type
(1~20) x 1017
2000-3500
《3000
Φ2"x0.5mm
Φ3"x0.6mm
Φ4"x0.8mm
Orientation
<100> / <111> ±0.5°
Standard dimension
20x20x0.5mm, 10x10x0.5mm, 10x5x0.5mm
Φ2"x0.5mm, Φ3"x0.6mm, Φ4"x0.8mm
Or others upon customer's requirements
Primary Orientation flat
Second Orientation flat
16mm(Φ2"), 22mm(Φ3"), 32.5mm(Φ4")
8mm(Φ2"), 11mm(Φ3"), 16mm(Φ4")
Surface roughness
Ra<=5A (0.5nm)
Polishing
Single side Polished or Double side polished
TTV / Bow /Warp TTV <10um
Bow <10um
Warp <15um
Special specification We can customize specific specification upon requirements


GaSb as a substrate material can be used for the production of certain infrared lasers and detectors of optical fiber transmission, GaSb is also foreseen with a lattice restriction mobility greater than GaAs, so that it has a potential application in the production of microwave devices. The main growth method GaS single crystal material, including traditional LEC Technology, improved LEC technology, Moving heating method / vertical gradient freeze technology (VGF) / vertical Bridgman technique (VBG) and other.

 
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