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GaSb substrate

GaSb substrate

 

Major Capability Parameter
Single crystal
Dopped
Conductivity type
Carrier concentration
(cm-3)
Mobility
(cm2/V.s)
Dislocation density
(cm-2)
Standard substrate
GaSb
Undoped
   /
(1-2)*1017
600-700
《2000
Φ2"×0.5mm
Φ3"×0.6mm
Φ4"×0.8mm
GaSb
Zn
  P-type
(5-100)*1017
200-500
《2000
Φ2"×0.5mm
Φ3"×0.6mm
Φ4"×0.8mm
GaSb
Te
  N-type
(1-20)´1017
2000-3500
《2000
Φ2"×0.5mm
Φ3"×0.6mm
Φ4"×0.8mm
Orientation
<100> ±0.5°
Standard dimension (mm)
20x20x0.5mm, 10×10×0.5mm, 10×5×0.5mm
Φ2"×0.5mm, Φ3"×0.6mm, Φ4"×0.8mm
Or upon customer's requirements
Orientation flat
Second Orientation flat
16mm(Φ2"), 22mm(Φ3"), 32.5mm(Φ4")
8mm(Φ2"), 11mm(Φ3"), 16mm(Φ4")
Surface roughness
Ra<=5A (0.5nm)
Polishing
One side or double side polished
  TTV <10um
Bow <10um
Warp <15um

GaSb as a substrate material can be used for the production of certain infrared lasers and detectors of optical fiber transmission, GaSb is also foreseen with a lattice restriction mobility greater than GaAs, so that it has a potential application in the production of microwave devices. The main growth method GaS single crystal material, including traditional LEC Technology, improved LEC technology, Moving heating method / vertical gradient freeze technology (VGF) / vertical Bridgman technique (VBG) and other.

 
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