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GaN on Sapphire wafer
Standard specifications |
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Product Name: | GaN thin film on Sapphire wafer | ||
Dopant and Conductivity: | N-type/Si-doped | N-type/Undoped | P-type/Mg-doped |
Orientation: | C-plane, <0001> | ||
Standard Size: |
Diameter 2"(50.8mm), Diameter 4"(100mm) |
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Standard Thickness: | 430um, 650um | ||
GaN thin film: | 4.5um, 20um | 4.5um, 20um | 4.5um, 20um |
Resistivity(300K): | <0.05 ohm-cm, | <0.5 ohm-cm | <10 ohm-cm |
Carrier Concentration: | > 1x10E18 /cm3 | < 5x10E17 /cm3 | > 6x10E16 /cm3 |
Mobility: | ~ 200 cm2/V•s | ~ 300 cm2/V•s | ~ 10 cm2/V•s |
Dislocation density: | <5x10E8 cm-2 | <5x10E8 /cm2 | <5x10E8 cm-2 |
Substrate | GaN on Sapphire substrate | GaN on Sapphire substrate | GaN on Sapphire substrate |
Uable area: | >90% | >90% | >90% |
Polishing | Standard: Single side polished, Option: Doulbe side polished | ||
Packing | Standard: each piece individual packed in one bag, class-100 clean bag, in class-1000 clean room |
Sapphire is the most popular substrate material for GaN thin film growth. The advantages of GaN on Sapphire wafer are good chemical stability, no absorption of visible light, moderate price, and relatively mature manufacturing technology. But the thermal conductivity is relatively poor, suitable for use in the operation of low current devices.
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