Crystal Material > Substrate Materials > Product Information > Next :Silicon on Sapphire wafer

GaN on Sapphire wafer

GaN on Sapphire wafer

Main Parameter
Product Name GaN thin film on Sapphire wafer
Doping and Conductivity N-type Semi-Insulating/Fe-doped P-type/Mg-doped
Orientation: C-plane, <0001>
Standard dimension: Dia. 2"(50.8mm), 4"(100mm)
Standard Thickness: 430um
GaN thin film: 4.5um, 20um 4.5um, 20um 4.5um, 20um
Resistivity(300K): <0.05 ohm-cm, <0.1 ohm-cm >10E6 ohm-cm <10 ohm-cm
Dislocation density: <1x10E8 cm-2 <1x10E8 cm-2 <1x10E8 cm-2
Substrate GaN on Sapphire GaN on Sapphire GaN on Sapphire
Uable area: >90% >90% >90%
Polishing Standard: Single side polished, Option: Doulbe side polished

Send Inquiry Online

More information, you can send Inquiry to us. We will reply you as soon as possible.

Contact Us

  • Biotain Crystal Co., Ltd.
  • Tel: (+86) 1506 0796 451
  • Fax: +86 592 523 6275
  • Email:
  • Work Time ( GMT+8 ):
  •    9 AM - 6 PM, From Monday - Friday
  • Website: