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Thermal oxide Silicon wafer

Thermal oxide Silicon wafer

Standard Specifications

Product Name

Thermal oxide Silicon wafer (SiO2/Si)
Oxide layer on Silicon wafer
Thermal oxidation of Silicon wafer

 

 

Oxide-layer(SiO2 layer)

25nm, 50nm, 100nm,  300nm, 500nm, 1um or others

Oxidation surface

Single-sided oxidation, Double-sided oxidation

Oxidation process

Dry oxidation, Wet oxidation,

 

 

Conductivity type/Dopant

N-type/Phos-doped or N-type/As-doped or P-type/Boron-doped or Un-doped

Orientation

<100> or <111>

Diameter of Silicon wafer

2"(50.8mm), 3"(76.2mm), 4"(100mm), 6"(150mm), 8"(200mm), 12"(250mm)

Thickness of Silicon wafer

280um, 380um, 525um, 675um, 725um

Resistivity (Ohm-cm)

0.001~0.005, 0.01~0.09, 0.1~0.9, 1~10, 20~30, >100, >1000, >10000

Polishing

Single side polished or Double side polished

Surface Roughness

Ra<5A (0.5nm) or Ra<10A (1.0nm)

 

The Thermal oxide Silicon wafer is growth an oxide layer(SiO2) on Silicon wafer, also name as "SiO2 + Si wafer". Growth a good quality oxide layer on the surface of Silicon wafer is important to the entire semiconductor integrated circuit fabrication process. 
 
The Thermal oxide SiO2 layer is not only as a masking layer for ion implantation or thermal diffusion, and also a passivation layer that protects the surface of the device from the surrounding environment. It's not just an electrically isolated insulation between the device and another device. It is also a major component of MOS processes and electrical isolation in multilayer metallization systems.

 
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