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LiGaO2 substrate

The main performance parameters
Product Name:	LiGaO2 single crystal substrate
Growth method	Czochralski method
Crystal Structure :	Orthogonal system
Lattice constant:	a=5.406 Å b=5.012 Å c=6.379 Å
Melting point:	1600 ℃
Density:	4.18g/cm³
Mohs hardness	7.5
Orientation	<100>, <001>
Standard Size	10x10x0.5mm, 5x5x0.5mm
Polishing	Single side polished or Double side polished
Packing	class-100 clean bag, in class-1000 clean room
Application	LiGaO2 substrate and GaN film are well matched, and can obtain a good gallium nitride film

Lithium gallate LiGaO2 single crystal substrate have a very good lattice matching for GaN (mismatch < 0.2%), and are chemically stable at high temperatures and low in cost , thus becoming a potential III-V Nitride thin film substrate material.

Lithium gallate(LiGaO2 ) and lithium aluminate(LiAlO2) single crystal are the best substrate materials for matching with GaN epitaxial films. GaN films are the basis for the current production of blue, violet, ultraviolet light-emitting diodes and solid-state white light sources.

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LiGaO2 substrate

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