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LiGaO2 substrate

LiGaO2 substrate



LiGaO2 substrate

Growth method

Czochralski method

Crystal Structure :

Orthogonal system

Lattice constant:

a=5.406 Å b=5.012 Å c=6.379 Å

Melting point:

1600 ℃



Mohs hardness



 <100>, <001>

Standard Size

Dia30 x 0.5mm, 20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm


Fine ground, One side polished or Two side polished


LiGaO2 substrate and GaN film are well matched, and can obtain a good gallium nitride film


Lithium gallate LiGaO2 single crystal substrate have a very good lattice matching for GaN (mismatch < 0.2%), and are chemically stable at high temperatures and low in cost , thus becoming a potential III-V Nitride thin film substrate material.
Lithium gallate(LiGaO2 ) and lithium aluminate(LiAlO2) single crystal are the best substrate materials for matching with GaN epitaxial films. GaN films are the basis for the current production of blue, violet, ultraviolet light-emitting diodes and solid-state white light sources.


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