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MgO substrate

MgO substrate


The main performance parameters
Growth method
Arc melting method
Crystal structure
Lattice constant
a = 4.130 Å
Melting point (℃)
Density (g / cm 3)
5.5 (mohs)
Coefficient of thermal expansion (/ ℃)
11.2x10 -6
Crystal cleavage plane
Optical transmission
> 90% (200 ~ 400nm),> 98% (500 ~ 1000nm)
ε = 9.65
Thermal conductivity (cal / cm sec degree)
0.14 300 ° K
10x3, 10x5, 10x10, 15x15,, 20x15, 20x20,
dia2 "x 0.33mm dia2" x 0.43mm 15 x 15 mm
0.5mm, 1.0mm
Single or double side polished
Crystal orientation
<100>, <110>, <111> ± 0.5 º
Crystal face orientation accuracy:
± 0.5 °
Edge orientation accuracy:
2 ° (special request up to within 1 °)
Miter chip
According to specific needs, the processing of the edge orientation in a specific crystal plane inclined at an angle (tilt angle of 1 ° -45 °) of the wafer
Roughness (Ra):
≤ 5Å (5μm × 5μm)
Key Features
MgO single crystal as the dielectric constant and loss microwave band is very small, and can obtain a large area substrate (diameter of 2 inches and larger), it is currently an important industrial HTS thin monocrystalline substrate world.
The main purpose
For the production of magnetic thin film, a semiconductor film, optical film and the high-temperature superconducting thin film, can also be used for mobile communication equipment for making superconducting devices such as microwave filters.
100 clean bag, 1000 clean room

Magnesium oxide (MgO) substrate (single crystal) is widely used in  many film  technical fields. As for the production of magnetic film semiconductor film, optical film and the high-temperature superconducting films. It is currently an important industrial temperature superconducting thin films of single-crystal substrates.


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